FDD16AN08A0_F085【PDF 9/16 页】MOSFET N-CH 75V 50A DPAK

您好，
买卖IC网欢迎您。
请登录
免费注册

5页 6页 7页 8页 [9页]10页 11页 12页 13页

N-CHANNEL/INJECTOR/SOLENOID DRIVER/P-CHANNEL

N-Channel MOSFETs (Planar)

POWER PRODUCTS

Product Number

(100V)

Polarity

BV DSS

Min. (V)

Configuration

R DS(ON) Max. ( Ω ) @ V GS =

10V 4.5V

Qg Typ. (nC)

@ V GS = 10V

I D

(A)

P D

(W)

R ? JC

(°C/W)

Package

HUFA76645S3ST_F085 (1)

HUFA75639S3ST_F085

N

N

100

100

Single

Single

0.014

0.025

0.0155

-

127

57

75

56

310

200

0.48

0.74

TO-263 (D2PAK)

TO-263 (D2PAK)

Product Number

(150V to 250V)

Polarity

BV DSS

Min. (V)

Configuration

R DS(ON) Max. ( Ω ) @ V GS =

10V 5V

Qg Typ. (nC)

@ V GS = 10V

I D

(A)

P D

(W)

R ? JC

(°C/W)

Package

HUFA75852G3_F085

FQD12N20LTM_F085 (1)

FQD9N25TM_F085

FQI27N25TU_F085

FQB27N25TU_F085

N

N

N

N

N

150

200

250

250

250

Single

Single

Single

Single

Single

0.16

0.28

0.42

0.11

0.11

-

0.32

-

-

-

215

16 @ 5V

15.5

65

65

75

9

7.4

25.5

25.5

500

55

55

180

180

0.3

2.27

2.27

0.7

0.7

TO-247

TO-252 (DPAK)

TO-252 (DPAK)

TO-262 (I2PAK)

TO-263 (D2PAK)

Product Number

(330V to 600V)

Polarity

BV DSS

Min. (V)

Configuration

R DS(ON) Max. ( Ω ) @ V GS =

10V 5V

Qg Typ. (nC)

@ V GS = 10V

I D

(A)

P D

(W)

R ? JC

(°C/W)

Package

FQB25N33TM_F085

FDD6N50TM_F085

FCB20N60_F085

FCP20N60_F085

FCB20N60F_F085 (2)

FCP20N60F_F085 (2)

FCH47N60_F085

FCH47N60F_F085 (2)

N

N

N

N

N

N

N

N

330

500

600

600

600

600

600

600

Single

Single

Single

Single

Single

Single

Single

Single

0.23

0.9

0.19

0.19

0.19

0.19

0.07

0.073

-

-

-

-

-

-

-

-

58 @ 15V

12.8

75

75

75

75

210

210

25

6

20

20

20

20

47

47

250

89

208

208

208

208

417

417

0.5

1.4

0.6

0.6

0.6

0.6

0.3

0.3

TO-263 (D2PAK)

TO-252 (DPAK)

TO-263 (D2PAK)

TO-220 3-LEAD

TO-263 (D2PAK)

TO-220 3-LEAD

TO-247

TO-247

(1)

(2)

Logic Level

Fast Recovery Type

Injector/Solenoid Driver

Product

Number

Polarity

Gate

Input

BV DSS

Min. (V)

Configuration

R DS(ON) Max. ( Ω ) @ V GS =

10V 4.5V

Qg Typ. (nC)

@ V GS = 10V

t r Typ.

(μs)

t f Typ.

(μs)

I D

(A)

P D

(W)

Special Features

R ? JC

(°C/W)

Package

FDSS2407

N

Logic

Level

62

Dual

0.11

0.132

4.3

1.2

3.5

3.3

2.27

Gate Disable,

V DS Feedback

55

SO-8

Source 1

1

8

Drain 1

Branding Dash

1

2

3

4

Gate 1

Source 2

Gate 2

2

3

4

7

6

5

Gate Disable 1

Drain 2

Drain FBK

SO-8

5

6

7

8

Pin 5- Drain Feedback Output

Pin 7- Gate Drive Disable Input

Injector Solenoid Driver: FDSS2407

P-Channel MOSFETs (Trench)

Product Number

(-20V)

Polarity

BV DSS

Min. (V)

Configuration

R DS(ON) Max. ( Ω ) @ V GS =

10V 2.7V

Qg Typ. (nC)

@ V GS = 4.5V

I D

(A)

P D

(W)

R ? JC

(°C/W)

Package

FDC642P_F085

FDS9431A_F085

FDS4465_F085

P

P

P

-20

-20

-20

Single

Single

Single

0.065

0.13

0.0085

0.1

0.18

0.0105

6.9

6

86

4

3.5

13.5

1.6

2.5

2.5

30

25

25

SSOT-6

SO-8

SO-8

f a i rc hi l d s e mi.c o m

9

发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

*型号	*数量	厂商	批号	封装

添加更多采购

我的联系方式

*

*

*

相关PDF资料

FDD16AN08A0_NF054 MOSFET N-CH 75V 50A DPAK

FDD18N20LZ MOSFET N-CH 200V DPAK-3

FDD2572_F085 MOSFET N-CH 150V 29A DPAK

FDD2582 MOSFET N-CH 150V 21A DPAK

FDD2670 MOSFET N-CH 200V 3.6A D-PAK

FDD26AN06A0_F085 MSOFET N-CH 60V 36A DPAK-3

FDD306P MOSFET P-CH 12V 6.7A DPAK

FDD3510H IC MOSFET DUAL N/P 80V DPAK-4

相关代理商/技术参数

FDD16AN08A0_NF054 功能描述:MOSFET 75V 50a .16Ohms RoHS:否制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube

FDD16AN08A0_NL 制造商:Rochester Electronics LLC 功能描述:- Bulk

FDD16AN08A0_Q 功能描述:MOSFET 75V 50a .16Ohms/VGS=1V RoHS:否制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube

FDD16AN08LA0 制造商:Fairchild Semiconductor Corporation 功能描述:

FDD18N20LZ 功能描述:MOSFET 200V NChannel UniFET RoHS:否制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube

FDD20AN06A0 功能描述:MOSFET N-Ch PowerTrench RoHS:否制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube

FDD20AN06A0_10 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 60V, 45A, 20mW

FDD20AN06A0_F085 功能描述:MOSFET N-Ch PowerTrench RoHS:否制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube